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IRFH7921PbF
Static @ T J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BV DSS
Drain-to-Source Breakdown Voltage
30
–––
–––
V
V GS = 0V, I D = 250μA
?Β V DSS / ? T J
Breakdown Voltage Temp. Coefficient
–––
0.02
–––
V/°C Reference to 25°C, I D = 1mA
R DS(on)
V GS(th)
? V GS(th)
I DSS
I GSS
gfs
Q g
Q gs1
Q gs2
Q gd
Q godr
Q sw
Q oss
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q gs2 + Q gd )
Output Charge
–––
–––
1.35
–––
–––
–––
–––
–––
27
–––
–––
–––
–––
–––
–––
–––
7.1
10.4
1.8
-6.2
–––
–––
–––
–––
–––
9.3
2.2
1.2
3.2
2.7
4.4
5.0
8.5
12.5
2.35
–––
1.0
150
100
-100
–––
14
–––
–––
–––
–––
–––
–––
m ?
V
mV/°C
μA
nA
S
nC
nC
V GS = 10V, I D = 15A
V GS = 4.5V, I D = 12A
V DS = V GS , I D = 25μA
V DS = 24V, V GS = 0V
V DS = 24V, V GS = 0V, T J = 125°C
V GS = 20V
V GS = -20V
V DS = 15V, I D = 12A
V DS = 15V
V GS = 4.5V
I D = 12A
See Fig.17 & 18
V DS = 16V, V GS = 0V
R G
t d(on)
Gate Resistance
Turn-On Delay Time
–––
–––
1.4
12
2.4
–––
?
V DD = 15V, V GS = 4.5V
t r
t d(off)
t f
C iss
C oss
C rss
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
–––
–––
–––
7.6
14
4.7
1210
240
120
–––
–––
–––
–––
–––
–––
ns
pF
I D = 12A
R G =1.8 ?
See Fig.15
V GS = 0V
V DS = 15V
? = 1.0MHz
Avalanche Characteristics
Parameter
Typ.
Max.
Units
E AS
I AR
Single Pulse Avalanche Energy
Avalanche Current
–––
–––
29
12
mJ
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
I S
I SM
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
–––
–––
–––
–––
3.9
120
A
MOSFET symbol
showing the
integral reverse
p-n junction diode.
G
D
S
V SD
t rr
Q rr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
–––
–––
12
11
1.0
18
17
V
ns
nC
T J = 25°C, I S = 12A, V GS = 0V
T J = 25°C, I F = 12A, V DD = 15V
di/dt = 300A/μs
t on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
www.irf.com ? 2013 International Rectifier
August 16, 2013
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